| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5923 |
1.5 W, silicon zener diode. Zener voltage 8.2V. Test current 45.7 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2 |
1N5923A |
1.5 W, silicon zener diode. Zener voltage 8.2V. Test current 45.7 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 3 |
1N5923C |
1.5 W, silicon zener diode. Zener voltage 8.2V. Test current 45.7 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 4 |
1N5923D |
1.5 W, silicon zener diode. Zener voltage 8.2V. Test current 45.7 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 5 |
1N5924 |
1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 6 |
1N5924A |
1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N5924C |
1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N5924D |
1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 9 |
1N5947 |
1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 10 |
1N5947A |
1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 11 |
1N5947C |
1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 12 |
1N5947D |
1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 13 |
1N5948 |
1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 14 |
1N5948A |
1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 15 |
1N5948C |
1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 16 |
1N5948D |
1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 17 |
1N971 |
0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 18 |
1N971A |
0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 19 |
1N972 |
0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 20 |
1N972A |
0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 21 |
2N5090 |
NPN silicon RF Power Transistor, 1.2W Output Minimum at 400MHz (7.8 dB Gain) |
Motorola |
| 22 |
2N6027 |
Thyristor PUT 40V 5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 23 |
2N6028 |
Thyristor PUT 40V 5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 24 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 25 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 26 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 27 |
2SC4622 |
Trans GP BJT 400V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 28 |
2SK4116LS |
Power MOSFET 400V 12A 540mOhm Single N-Channel TO-220FI(LS) |
ON Semiconductor |
| 29 |
2SK4117LS |
Power MOSFET 400V 15A 420mOhm Single N-Channel TO-220FI(LS) |
ON Semiconductor |
| 30 |
3EZ160D |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
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