No. |
Part Name |
Description |
Manufacturer |
1 |
BQ25898 |
I2C Controlled Single Cell 4-A Fast Charger with MaxChargeTM for High Input 42-DSBGA -40 to 125 |
Texas Instruments |
2 |
BQ25898YFFR |
I2C Controlled Single Cell 4-A Fast Charger with MaxChargeTM for High Input 42-DSBGA -40 to 125 |
Texas Instruments |
3 |
BQ25898YFFT |
I2C Controlled Single Cell 4-A Fast Charger with MaxChargeTM for High Input 42-DSBGA -40 to 125 |
Texas Instruments |
4 |
KS0678 |
6 BIT 420 CHANNEL TFT-LCD SOURCE DRIVER |
Samsung Electronic |
5 |
MTB50N06V |
TMOS POWER FET 42 AMPERES 60 VOLTS |
Motorola |
6 |
MTB50N06V |
Power MOSFET 42 A, 60V, N-Channel D2PAK |
ON Semiconductor |
7 |
MTB50N06VL |
TMOS POWER FET 42 AMPERES 60 VOLTS |
Motorola |
8 |
MTB50N06VL |
Power MOSFET 42 Amps, 60 Volts, Logic Level |
ON Semiconductor |
9 |
MTB50N06VL-D |
Power MOSFET 42 Amps, 60 Volts, Logic Level N-Channel D2PAK |
ON Semiconductor |
10 |
MTP1302 |
TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm |
Motorola |
11 |
MTP1302 |
OBSOLETE - Power MOSFET 42 Amps, 30 Volts |
ON Semiconductor |
12 |
MTP1302-D |
Power MOSFET 42 Amps, 30 Volts N-Channel TO-220 |
ON Semiconductor |
13 |
MTP50N06 |
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
Motorola |
14 |
MTP50N06 |
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM |
Motorola |
15 |
MTP50N06V |
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
Motorola |
16 |
MTP50N06V-D |
Power MOSFET 42 Amps, 60 Volts N-Channel TO-220 |
ON Semiconductor |
17 |
MTP50N06VL |
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM |
Motorola |
18 |
MTP50N06VL |
Power MOSFET 42 Amps, 60 Volts, Logic Level |
ON Semiconductor |
19 |
MTP50N06VL-D |
Power MOSFET 42 Amps, 60 Volts, Logic Level N-Channel TO-220 |
ON Semiconductor |
20 |
NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK |
ON Semiconductor |
21 |
NID5003NT4 |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK |
ON Semiconductor |
22 |
NIF5002N |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
23 |
NIF5002NT1 |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
24 |
NIF5002NT1G |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
25 |
NIF5002NT3 |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
26 |
NIF5003N |
Self-protected FET with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 |
ON Semiconductor |
27 |
PXAD184218FV-V1 |
High Power RF LDMOS FET 420W, 28V, 1805 - 1880 MHz |
Wolfspeed |
28 |
S6C0678 |
6 BIT 420 CHANNEL TFT-LCD SOURCE DRIVER |
Samsung Electronic |
29 |
S6C0679 |
6 BIT 420 CHANNEL RSDS TFT�LCD SOURCE DRIVER |
Samsung Electronic |
30 |
TAFE1040 |
3V 10-Bit 42 MSPS CCD Analog Front End |
Texas Instruments |
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