| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5942 |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2 |
1N5942A |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 3 |
1N5942C |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 4 |
1N5942D |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 5 |
1N966 |
0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 6 |
1N966A |
0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N967 |
0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N967A |
0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 9 |
3EZ100D |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 10 |
3EZ100D1 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 11 |
3EZ100D10 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 12 |
3EZ100D2 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 13 |
3EZ100D3 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 14 |
3EZ100D4 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 15 |
A8178 |
Low-Dropout 7.7 V Preregulator |
Allegro MicroSystems |
| 16 |
A8178LLT |
Low-Dropout 7.7 V Preregulator |
Allegro MicroSystems |
| 17 |
D2205UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
| 18 |
IRFF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. |
General Electric Solid State |
| 19 |
IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. |
General Electric Solid State |
| 20 |
MBR735 |
Schottky Barrier Rectifier, Forward Current 7.5A |
Vishay |
| 21 |
MBR745 |
Schottky Barrier Rectifier, Forward Current 7.5A |
Vishay |
| 22 |
MBR750 |
Schottky Barrier Rectifier, Forward Current 7.5A |
Vishay |
| 23 |
MBR760 |
Schottky Barrier Rectifier, Forward Current 7.5A |
Vishay |
| 24 |
MBR7H35 |
Schottky Barrier Rectifiers, Forward Current 7.5 A |
Vishay |
| 25 |
MBR7H45 |
Schottky Barrier Rectifiers, Forward Current 7.5 A |
Vishay |
| 26 |
MBR7H50 |
Schottky Barrier Rectifiers, Forward Current 7.5 A |
Vishay |
| 27 |
MBR7H60 |
Schottky Barrier Rectifiers, Forward Current 7.5 A |
Vishay |
| 28 |
MBRB735 |
Schottky Barrier Rectifier, Forward Current 7.5A |
Vishay |
| 29 |
MBRB745 |
Schottky Barrier Rectifier, Forward Current 7.5A |
Vishay |
| 30 |
MBRB750 |
Schottky Barrier Rectifier, Forward Current 7.5A |
Vishay |
| | | |
