| No. |
Part Name |
Description |
Manufacturer |
| 1 |
50MT060ULST |
LOW SIDE CHOPPER IGBT MTP |
International Rectifier |
| 2 |
HT48E50 |
I/O Type 8-Bit MTP MCU With EEPROM |
Holtek Semiconductor |
| 3 |
IRF6609TR1PBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 4 |
IRF6609TRPBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 5 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 6 |
IRF6618TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 7 |
IRF6691TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 8 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 9 |
IRF6727M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 10 |
IRF6727MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 11 |
IRF6727MTRPBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 12 |
IRF8301M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 13 |
IRF8301MTRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 14 |
PB-IRF6609 |
Leaded A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 15 |
PB-IRF6613 |
Leaded A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 16 |
PB-IRF6618 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 17 |
PB-IRF6691 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 18 |
W78E51B |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 19 |
W78E51B-24 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 20 |
W78E51B-40 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 21 |
W78E51BF-24 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 22 |
W78E51BF-40 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 23 |
W78E51BP-24 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 24 |
W78E51BP-40 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 25 |
W78E52B |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 26 |
W78E52B-24 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 27 |
W78E52B-40 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 28 |
W78E52BF-24 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 29 |
W78E52BF-40 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| 30 |
W78E52BP-24 |
8-BIT MTP MICROCONTROLLER |
Winbond Electronics |
| | | |
