| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1MBI150SH-140 |
Tentative target specification |
Fuji Electric |
| 2 |
2SK1503-01 |
Fuji power MOSFET Specification |
Fuji Electric |
| 3 |
2SK3530 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 4 |
2SK3530-01MR |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 5 |
2SK3679 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 6 |
2SK3683 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 7 |
2SK3683-01MR |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 8 |
64LC20 |
1K/2K/4K-Bit SPI Serial E2PROM |
Catalyst Semiconductor |
| 9 |
72893 |
Dual N-Channel/ 30-V (D-S) MOSFET Specification Comparison |
Vishay |
| 10 |
AB-102 |
OUTPUT SPECTRUM AND POST-LPF DESIGN OF THE PCM1710 |
Burr Brown |
| 11 |
AD7398BR-REEL |
0.3-7V; quad, serial-input 12-bit DAC. For automatic output span voltage, portable communications |
Analog Devices |
| 12 |
AD7398BRU-REEL |
0.3-7V; quad, serial-input 12-bit DAC. For automatic output span voltage, portable communications |
Analog Devices |
| 13 |
AN704 |
Designing DC/DC Converters to Meet CCITT Specifications for ISDN Terminals |
Vishay |
| 14 |
AND8112 |
A Quasi-Resonant SPICE Model Eases Feedback Loop Designs |
ON Semiconductor |
| 15 |
AP640R5-A3 |
23�34 GHz Surface Mount SPDT Switch |
Alpha Industries Inc |
| 16 |
ARZ140M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 17 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 18 |
ARZ140M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 19 |
ARZ145T05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 20 |
ARZ145T12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 21 |
ARZ145T24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 22 |
AT48801 |
8 Bit Spread- Spectrum Microcontroller |
Atmel |
| 23 |
AT48801-16QC |
8 Bit Spread- Spectrum Microcontroller |
Atmel |
| 24 |
AT48801-16QI |
8 Bit Spread- Spectrum Microcontroller |
Atmel |
| 25 |
AT76C506 |
AT76C506 single-chip MAC and Baseband with low power ARM7TDMI� RISC processor, PCI Bus Interface (compliant with PCI v2.2 and PCI Power Management Specification v1.1), integrated 6K x 32-bit Internal SRAM, 160-pin CABGA Package, 3.3V opera |
Atmel |
| 26 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 27 |
BTB15-200B |
V(drm): 200V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 28 |
BTB15-400B |
V(drm): 400V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 29 |
BTB15-600B |
V(drm): 600V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 30 |
BTB15-700B |
V(drm): 700V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
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