No. |
Part Name |
Description |
Manufacturer |
1 |
1A184 |
IA184 LOW-COST, HIGH-LINEARITY ISOLATION AMPLIFIER |
Intronics |
2 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
3 |
2N3019 |
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS |
SGS Thomson Microelectronics |
4 |
2N3055U |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
5 |
2N3055V |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
6 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
7 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
8 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
9 |
2N3771 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
10 |
2N3772 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
11 |
2N3773 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage switch |
SGS-ATES |
12 |
2N4348 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier |
SGS-ATES |
13 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
14 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
15 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
16 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
17 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
18 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
19 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
20 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
21 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
22 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
23 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
24 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
25 |
2SB331H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
26 |
2SB332H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
27 |
2SB333H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
28 |
2SB334H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
29 |
2SC2229 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAGE Switching, Driver Stage Audio Amplifier Applications |
TOSHIBA |
30 |
2SC4218 |
Color TV Chroma Output, High-Voltage Driver Applications |
SANYO |
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