No. |
Part Name |
Description |
Manufacturer |
1 |
APT10086BLC |
POWER MOS VI 1000V 13A 0.860 Ohm |
Advanced Power Technology |
2 |
APT10086BVFR |
POWER MOS V 1000V 13A 0.860 Ohm |
Advanced Power Technology |
3 |
APT10086BVFRG |
FREDFETs |
Microsemi |
4 |
APT10086BVR |
POWER MOS V 1000V 13A 0.860 Ohm |
Advanced Power Technology |
5 |
APT10086BVRG |
MOSFET |
Microsemi |
6 |
APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm |
Advanced Power Technology |
7 |
APT10086SVR |
POWER MOS V 1000V 13A 0.860 Ohm |
Advanced Power Technology |
8 |
APT10086SVRG |
MOSFET |
Microsemi |
9 |
APT10088HVR |
POWER MOS V 1000V 11A 0.880 Ohm |
Advanced Power Technology |
10 |
FST10080 |
100A, 80V ultra fast recovery rectifier |
MCC |
11 |
FST10080 |
100 Amp Rectifier 20 to 100 Volts Schottky Barrier |
Micro Commercial Components |
12 |
FT1008BH |
200 V, 10 mA logic level TRIAC |
Fagor |
13 |
FT1008DH |
400 V, 10 mA logic level TRIAC |
Fagor |
14 |
FT1008MH |
600 V, 10 mA logic level TRIAC |
Fagor |
15 |
K6T1008C2C-B |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
16 |
K6T1008C2C-DB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
17 |
K6T1008C2C-DB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
18 |
K6T1008C2C-DL55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
19 |
K6T1008C2C-DL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
20 |
K6T1008C2C-F |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
21 |
K6T1008C2C-GB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
22 |
K6T1008C2C-GB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
23 |
K6T1008C2C-GL55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
24 |
K6T1008C2C-GL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
25 |
K6T1008C2C-L |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
26 |
K6T1008C2C-P |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
27 |
K6T1008C2C-RB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
28 |
K6T1008C2C-RB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
29 |
K6T1008C2C-TB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
30 |
K6T1008C2C-TB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
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