Datasheets for T1008

Datasheets found :: 77 Page: | 1 | 2 | 3 |

No.	Part Name	Description	Manufacturer
1	APT10086BLC	POWER MOS VI 1000V 13A 0.860 Ohm	Advanced Power Technology
2	APT10086BVFR	POWER MOS V 1000V 13A 0.860 Ohm	Advanced Power Technology
3	APT10086BVFRG	FREDFETs	Microsemi
4	APT10086BVR	POWER MOS V 1000V 13A 0.860 Ohm	Advanced Power Technology
5	APT10086BVRG	MOSFET	Microsemi
6	APT10086SLC	POWER MOS VI 1000V 13A 0.860 Ohm	Advanced Power Technology
7	APT10086SVR	POWER MOS V 1000V 13A 0.860 Ohm	Advanced Power Technology
8	APT10086SVRG	MOSFET	Microsemi
9	APT10088HVR	POWER MOS V 1000V 11A 0.880 Ohm	Advanced Power Technology
10	FST10080	100A, 80V ultra fast recovery rectifier	MCC
11	FST10080	100 Amp Rectifier 20 to 100 Volts Schottky Barrier	Micro Commercial Components
12	FT1008BH	200 V, 10 mA logic level TRIAC	Fagor
13	FT1008DH	400 V, 10 mA logic level TRIAC	Fagor
14	FT1008MH	600 V, 10 mA logic level TRIAC	Fagor
15	K6T1008C2C-B	55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
16	K6T1008C2C-DB55	55ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
17	K6T1008C2C-DB70	70ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
18	K6T1008C2C-DL55	55ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
19	K6T1008C2C-DL70	70ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
20	K6T1008C2C-F	70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
21	K6T1008C2C-GB55	55ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
22	K6T1008C2C-GB70	70ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
23	K6T1008C2C-GL55	55ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
24	K6T1008C2C-GL70	70ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
25	K6T1008C2C-L	55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
26	K6T1008C2C-P	70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
27	K6T1008C2C-RB55	55ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
28	K6T1008C2C-RB70	70ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
29	K6T1008C2C-TB55	55ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic
30	K6T1008C2C-TB70	70ns; 128 x 8-bit low power CMOS static RAM	Samsung Electronic

Datasheets found :: 77 Page: | 1 | 2 | 3 |