No. |
Part Name |
Description |
Manufacturer |
1 |
AN1101 |
MODIFYING YOUR ST7MDT20M-EPB, ST7MDT20J-EPB OR ST7MDT10-EPB TO SUPPORT STVP7 RELEASE 1.3.1 AND ONWARDS |
SGS Thomson Microelectronics |
2 |
AN1483 |
MODIFYING YOUR ST7MDT20M-EPB, ST7MDT20J-EPB OR ST7MDT10-EPB TO SUPPORT STVP7 RELEASE 1.3.1 AND ONWARDS |
SGS Thomson Microelectronics |
3 |
BAT20J |
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE |
ST Microelectronics |
4 |
BAT20JFILM |
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE |
ST Microelectronics |
5 |
GT20J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
6 |
GT20J121 |
IGBT for soft switching applications |
TOSHIBA |
7 |
GT20J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
8 |
GT20J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
9 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
10 |
GT20J341 |
Discrete IGBT |
TOSHIBA |
11 |
ST7MDT20J-EMU3 |
ST7-EMU3 |
ST Microelectronics |
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