| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DS_S1T2410B01 |
bipolar integrated circuit designed as a telephone bell replacement |
Samsung Electronic |
| 2 |
DS_S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 3 |
S1T2410B01 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 4 |
S1T2410B01-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 5 |
S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 6 |
S1T2410B02-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 7 |
SN74BCT2410 |
11-Bit MOS Memory Drivers With 3-State Outputs 28-SOIC 0 to 70 |
Texas Instruments |
| 8 |
SN74BCT2410DW |
11-Bit MOS Memory Drivers With 3-State Outputs 28-SOIC 0 to 70 |
Texas Instruments |
| | | |
