| No. |
Part Name |
Description |
Manufacturer |
| 1 |
74HCT30N |
8-input NAND gate |
NXP Semiconductors |
| 2 |
74HCT30N |
74HC/HCT30; 8-input NAND gate |
Philips |
| 3 |
APT30N60BC6 |
MOSFET |
Microsemi |
| 4 |
APT30N60SC6 |
MOSFET |
Microsemi |
| 5 |
IXDT30N120 |
IGBT Discretes: NPT IGBT |
IXYS |
| 6 |
IXDT30N120D1 |
IGBT Discretes: NPT IGBT |
IXYS |
| 7 |
IXFT30N40Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 8 |
IXFT30N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 9 |
IXGT30N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 10 |
IXGT30N60BD1 |
HiPerFASTTM IGBT with Diode |
IXYS Corporation |
| 11 |
IXGT30N60BU1 |
HiPerFAST IGBT with Diode |
IXYS Corporation |
| 12 |
IXST30N60B |
High Speed IGBT |
IXYS Corporation |
| 13 |
IXST30N60BD1 |
High Speed IGBT with Diode |
IXYS Corporation |
| 14 |
IXST30N60C |
High Speed IGBT |
IXYS Corporation |
| 15 |
IXST30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 16 |
KGT30N135NDH |
IGBT |
Korea Electronics (KEC) |
| 17 |
RGT30NS65D |
650V 15A Field Stop Trench IGBT |
ROHM |
| 18 |
RGT30NS65DGTL |
650V 15A Field Stop Trench IGBT |
ROHM |
| 19 |
SCT30N120 |
Silicon carbide Power MOSFET 45 A, 1200 V, 80 mΩ, N-channel in HiP247 package |
ST Microelectronics |
| 20 |
T30N05 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 21 |
T30N1 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 22 |
T30N10 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 23 |
T30N11 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 24 |
T30N12 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 25 |
T30N2 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 26 |
T30N3 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 27 |
T30N4 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 28 |
T30N5 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 29 |
T30N6 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 30 |
T30N7 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| | | |
