| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HUF75307T3ST |
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET |
Fairchild Semiconductor |
| 2 |
HUF75307T3ST |
2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET |
Intersil |
| 3 |
HUF75307T3ST_NL |
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET PowerMOSFET |
Fairchild Semiconductor |
| 4 |
HUF75309T3ST |
3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
Fairchild Semiconductor |
| 5 |
HUF75309T3ST |
3A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFET |
Intersil |
| 6 |
HUF76113T3ST |
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 7 |
HUF76113T3ST |
4.7A/ 30V/ 0.031 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
Intersil |
| 8 |
HUFA75307T3ST |
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET |
Fairchild Semiconductor |
| 9 |
HUFA75309T3ST |
3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
Fairchild Semiconductor |
| 10 |
IAM4810T3S |
Input Power Conditioning Module |
Vicor Corporation |
| 11 |
IAM4820T3S |
Input Power Conditioning Module |
Vicor Corporation |
| 12 |
LT3S31W |
�3mm(T-1), Cylinder Type(Thick Flange), Colored Diffusion, Tape-packaged LED Lamps for Surface Mount |
SHARP |
| 13 |
LT3S65W |
�3mm(T-1), Cylinder Type(Thick Flange), Colored Transparency, Tape-packaged LED Lamps for Surface Mount |
SHARP |
| 14 |
MT3S03AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 15 |
MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 16 |
MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 17 |
MT3S04AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 18 |
MT3S04AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 19 |
MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 20 |
MT3S05T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 21 |
MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 22 |
MT3S06T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 23 |
MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 24 |
MT3S07S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 25 |
MT3S07T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 26 |
MT3S07U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 27 |
MT3S08T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 28 |
MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 29 |
MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 30 |
MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| | | |
