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Datasheets for TAGE SENSI

Datasheets found :: 226
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 AQZ102D Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 60 V, load current 3.6 A. Matsushita Electric Works(Nais)
2 AQZ104D Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 400 V, load current 0.6 A. Matsushita Electric Works(Nais)
3 AQZ105D Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 100 V, load current 2.3 A. Matsushita Electric Works(Nais)
4 AQZ107D Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 200 V, load current 1.1 A. Matsushita Electric Works(Nais)
5 AQZ202D Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 60 V, load current 2.7 A. Matsushita Electric Works(Nais)
6 AQZ204D Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 400 V, load current 0.45 A. Matsushita Electric Works(Nais)
7 AQZ205D Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 100 V, load current 1.8 A. Matsushita Electric Works(Nais)
8 AQZ207D Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 200 V, load current 0.9 A. Matsushita Electric Works(Nais)
9 LM8364 Micropower Undervoltage Sensing Circuits National Semiconductor
10 LM8364 Micropower Undervoltage Sensing Circuits Texas Instruments
11 LM8364BALMF20 Micropower Undervoltage Sensing Circuits National Semiconductor
12 LM8364BALMF30 Micropower Undervoltage Sensing Circuits National Semiconductor
13 LM8364BALMF45 Micropower Undervoltage Sensing Circuits National Semiconductor
14 LM8364BALMFX20 Micropower Undervoltage Sensing Circuits National Semiconductor
15 LM8364BALMFX30 Micropower Undervoltage Sensing Circuits National Semiconductor
16 LM8364BALMFX45 Micropower Undervoltage Sensing Circuits National Semiconductor
17 LM8365 Micropower Undervoltage Sensing Circuits with Programmable Output Delay National Semiconductor
18 LM8365 Micropower Undervoltage Sensing Circuits with Programmable Output Delay Texas Instruments
19 LM8365BALMF22 Micropower Undervoltage Sensing Circuits with Programmable Output Delay National Semiconductor
20 LM8365BALMF27 Micropower Undervoltage Sensing Circuits with Programmable Output Delay National Semiconductor
21 LM8365BALMF45 Micropower Undervoltage Sensing Circuits with Programmable Output Delay National Semiconductor
22 LM8365BALMFX22 Micropower Undervoltage Sensing Circuits with Programmable Output Delay National Semiconductor
23 LM8365BALMFX27 Micropower Undervoltage Sensing Circuits with Programmable Output Delay National Semiconductor
24 LM8365BALMFX45 Micropower Undervoltage Sensing Circuits with Programmable Output Delay National Semiconductor
25 LM8365BCLMF30 Micropower Undervoltage Sensing Circuits with Programmable Output Delay National Semiconductor
26 LM8365BCLMFX30 Micropower Undervoltage Sensing Circuits with Programmable Output Delay National Semiconductor
27 LX6433CSE Undervoltage Sensing Circuit Microsemi
28 LX7001 TRANSIENT IMMUNE UNDERVOLTAGE SENSING CIRCUIT Microsemi
29 MC33064 UnderVoltage Sensing Circuit ON Semiconductor
30 MC33064D-005 UnderVoltage Sensing Circuit ON Semiconductor


Datasheets found :: 226
Page: | 1 | 2 | 3 | 4 | 5 |



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