| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MTB10N60E7 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 2 |
MTB10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3 |
MTB10N60E7T4 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 4 |
STB10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 5 |
STB10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 6 |
TB10N6 |
Bidirectional Thyristor (triac) |
IPRS Baneasa |
| 7 |
TB10N6 |
10Aeff 600V TRIAC |
IPRS Baneasa |
| | | |
