| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BTB15-200B |
V(drm): 200V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 2 |
BTB15-400B |
V(drm): 400V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3 |
BTB15-600B |
V(drm): 600V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 4 |
BTB15-700B |
V(drm): 700V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 5 |
BTB15-800B |
V(drm): 800V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 6 |
MAUPTB15 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 7 |
MAUPTB15E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 8 |
MCM101524TB15 |
1M x 4 bit fast static random access memory |
Motorola |
| 9 |
MCM101525TB15 |
2M x 2 bit fast static random access memory |
Motorola |
| 10 |
MTB15N06E |
TMOS POWER FET 15 AMPERES |
Motorola |
| 11 |
MTB15N06V |
TMOS POWER FET 15 AMPERES |
Motorola |
| 12 |
MTB15N06V |
15 A D2PAK N-Channel MOSFET, VDSS 60 |
ON Semiconductor |
| 13 |
MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 14 |
MUPTB15 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 15 |
MUPTB15e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 16 |
MXLUPTB15 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 17 |
MXLUPTB15e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 18 |
MXUPTB15 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 19 |
MXUPTB15e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 20 |
NGTB15N120FLW |
IGBT 1200V 15A FS1 Solar/UPS |
ON Semiconductor |
| 21 |
NGTB15N120IHL |
IGBT 1200V 15A FS1 Induction Heating |
ON Semiconductor |
| 22 |
NGTB15N120IHR |
IGBT with Monolithic Free Wheeling Diode |
ON Semiconductor |
| 23 |
NGTB15N120L |
IGBT 1200V 15A FS1 Gen Mkt |
ON Semiconductor |
| 24 |
NGTB15N135IHR |
IGBT with Monolithic Free Wheeling Diode |
ON Semiconductor |
| 25 |
NGTB15N60E |
IGBT - Short-Circuit Rated |
ON Semiconductor |
| 26 |
NGTB15N60S1E |
IGBT - Short-Circuit Rated |
ON Semiconductor |
| 27 |
STB150N3LH6 |
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 28 |
STB150NF55 |
N-CHANNEL 55V - 0.005 OHM -120A D2PAK/TO-220/TO-247 STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 29 |
STB150NF55 |
N-CHANNEL 55V - 0.005 OHM -120A D2PAK/TO-220/TO-247 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 30 |
STB150NF55T4 |
N-CHANNEL 55V - 0.005 OHM -120A D2PAK/TO-220/TO-247 STRIPFET II POWER MOSFET |
ST Microelectronics |
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