| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HGTD2N120BNS |
12A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 2 |
HGTD2N120BNS |
12A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 3 |
HGTD2N120CNS |
13A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 4 |
HGTD2N120CNS |
13A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 5 |
MTD2N40E |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
Motorola |
| 6 |
MTD2N40E |
Power MOSFET 2 Amps, 400 Volts |
ON Semiconductor |
| 7 |
MTD2N40E-D |
Power MOSFET 2 Amps, 400 Volts N-Channel DPAK |
ON Semiconductor |
| 8 |
MTD2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
Motorola |
| 9 |
MTD2N50E |
OBSOLETE - Power MOSFET 2 Amps, 500 Volts |
ON Semiconductor |
| 10 |
MTD2N50E-D |
Power MOSFET 2 Amps, 500 Volts N-Channel DPAK |
ON Semiconductor |
| 11 |
STD2N50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 12 |
STD2N50 |
N-CHANNEL MOSFET |
ST Microelectronics |
| 13 |
STD2N50-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 14 |
STD2N50-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 15 |
STD2N62K3 |
N-channel 620 V, 3 Ohm typ., 2.2 A SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 16 |
STD2N80K5 |
N-channel 800 V, 3.5 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 17 |
STD2N95K5 |
N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 18 |
STD2NA50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 19 |
STD2NA50 |
N-CHANNEL MOSFET |
ST Microelectronics |
| 20 |
STD2NA50-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 21 |
STD2NA50-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 22 |
STD2NA50T4 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 23 |
STD2NA50T4 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 24 |
STD2NA60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 25 |
STD2NA60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 26 |
STD2NA60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 27 |
STD2NB25 |
N - CHANNEL 250V - 1.7Ohm - 2A - IPAK/DPAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 28 |
STD2NB25 |
N-CHANNEL 250V - 1.7 OHM - 2A - IPAK/DPAK POWERMESH MOSFET |
ST Microelectronics |
| 29 |
STD2NB25T4 |
N-CHANNEL 250V - 1.7 OHM - 2A - IPAK/DPAK POWERMESH MOSFET |
ST Microelectronics |
| 30 |
STD2NB40 |
N - CHANNEL 400V - 3.5Ohm - 2A - IPAK/DPAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
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