| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HGTD3N60A4 |
600V/ SMPS Series N-Channel IGBT |
Fairchild Semiconductor |
| 2 |
HGTD3N60A4S |
600V, SMPS Series N-Channel IGBT |
Fairchild Semiconductor |
| 3 |
HGTD3N60A4S |
600V/ SMPS Series N-Channel IGBT |
Intersil |
| 4 |
HGTD3N60B3S |
7A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
| 5 |
HGTD3N60B3S |
7A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
| 6 |
HGTD3N60C3 |
6A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
| 7 |
HGTD3N60C3S |
6A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
| 8 |
HGTD3N60C3S |
6A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
| 9 |
MTD3N25E |
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
Motorola |
| 10 |
MTD3N25E |
3 Amp DPAK Surface Mount Products, N-Channel, VDSS 250 |
ON Semiconductor |
| 11 |
MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 12 |
STD3N25 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 13 |
STD3N25 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 14 |
STD3N25 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 15 |
STD3N30 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 16 |
STD3N30-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 17 |
STD3N30-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 18 |
STD3N30L |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 19 |
STD3N30L-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 20 |
STD3N30L-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 21 |
STD3N40K3 |
N-channel 400 V, 2.7 Ohm typ., 2 A SuperMESH3(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
| 22 |
STD3N62K3 |
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 23 |
STD3N80K5 |
N-channel 800 V, 2.8 Ohm typ., 2.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 24 |
STD3NA50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 25 |
STD3NA50 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 26 |
STD3NA50 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 27 |
STD3NB30 |
N - CHANNEL 300V - 1.8W - 3.2A - DPAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 28 |
STD3NB30 |
N-CHANNEL 300V - 1.8 OHM - 3.2A DPAK POWERMESH MOSFET |
SGS Thomson Microelectronics |
| 29 |
STD3NB30 |
N-CHANNEL 300V - 1.8 OHM - 3.2A DPAK POWERMESH MOSFET |
ST Microelectronics |
| 30 |
STD3NB50 |
N - CHANNEL 500V - 2.5Ohm - 3A - IPAK/DPAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
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