No. |
Part Name |
Description |
Manufacturer |
1 |
16C2850 |
DUAL UART WITH 128-byte FIFOs AND RS-485 HALF DUPLEX CONTROL |
Exar |
2 |
1PP75 |
Photodiode gate for sound recording |
Tesla Elektronicke |
3 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
4 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
5 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
6 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
7 |
2SB1149 |
Suitable for use to operate from IC without Predriver, such as hammer driver |
NEC |
8 |
2SC454 |
Silicon NPN Epitaxial LTP Transistor, intended for use in MW Frequency Converter, 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
9 |
2SK2496 |
RF Single Gate FETs |
TOSHIBA |
10 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
11 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
12 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
13 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
14 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
15 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
16 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
17 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
18 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
19 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
20 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
21 |
3SK257 |
RF Dual Gate FETs |
TOSHIBA |
22 |
3SK258 |
RF Dual Gate FETs |
TOSHIBA |
23 |
3SK259 |
RF Dual Gate FETs |
TOSHIBA |
24 |
3SK274 |
RF Dual Gate FETs |
TOSHIBA |
25 |
3SK320 |
RF Dual Gate FETs |
TOSHIBA |
26 |
40600 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
27 |
40601 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
28 |
40602 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
29 |
40603 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
30 |
40604 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
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