| No. |
Part Name |
Description |
Manufacturer |
| 1 |
16C2850 |
DUAL UART WITH 128-byte FIFOs AND RS-485 HALF DUPLEX CONTROL |
Exar |
| 2 |
1PP75 |
Photodiode gate for sound recording |
Tesla Elektronicke |
| 3 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 4 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 5 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 6 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 7 |
2SB1149 |
Suitable for use to operate from IC without Predriver, such as hammer driver |
NEC |
| 8 |
2SC454 |
Silicon NPN Epitaxial LTP Transistor, intended for use in MW Frequency Converter, 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 9 |
2SK2496 |
RF Single Gate FETs |
TOSHIBA |
| 10 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 11 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 12 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 13 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 14 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 15 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 16 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 17 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 18 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 19 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 20 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 21 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 22 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 23 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 24 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 25 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 26 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 27 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 28 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 29 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 30 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
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