| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK2496 |
RF Single Gate FETs |
TOSHIBA |
| 2 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 3 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 4 |
3SK257 |
RF Dual Gate FETs |
TOSHIBA |
| 5 |
3SK258 |
RF Dual Gate FETs |
TOSHIBA |
| 6 |
3SK259 |
RF Dual Gate FETs |
TOSHIBA |
| 7 |
3SK274 |
RF Dual Gate FETs |
TOSHIBA |
| 8 |
3SK320 |
RF Dual Gate FETs |
TOSHIBA |
| 9 |
BFR29 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
| 10 |
BFS28 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 11 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
| | | |
