No. |
Part Name |
Description |
Manufacturer |
1 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
2 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
3 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
4 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
5 |
2SC454 |
Silicon NPN Epitaxial LTP Transistor, intended for use in MW Frequency Converter, 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
6 |
AFI30 |
Microwave intermediate frequency amplifier |
CCSIT-CE |
7 |
AFI60 |
Microwave intermediate frequency amplifier |
CCSIT-CE |
8 |
AFI90 |
Microwave intermediate frequency amplifier |
CCSIT-CE |
9 |
BM3189 |
βM3189 Circuit for intermediate frequency MF, HI FI |
IPRS Baneasa |
10 |
LMX2240 |
Intermediate Frequency Receiver |
National Semiconductor |
11 |
LMX2240M |
Intermediate Frequency Receiver |
National Semiconductor |
12 |
LMX2240MX |
Intermediate Frequency Receiver |
National Semiconductor |
13 |
TDA440 |
Amplifier of intermediate frequency TV |
IPRS Baneasa |
14 |
TDA440N |
Amplifier of intermediate frequency TV |
IPRS Baneasa |
15 |
TDA440P |
Amplifier of intermediate frequency TV |
IPRS Baneasa |
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