| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ICTE36 |
Diode TVS Single Uni-Dir 36V 1.5KW 2-Pin Case 41A-04 Box |
New Jersey Semiconductor |
| 2 |
ICTE36 |
UNI-AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PORTECTION UNI- ET BIDIRECTIONNELLES |
ST Microelectronics |
| 3 |
ICTE36/TR12 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 4 |
ICTE36C |
Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin DO-201AD |
New Jersey Semiconductor |
| 5 |
ICTE36C |
UNI-AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PORTECTION UNI- ET BIDIRECTIONNELLES |
ST Microelectronics |
| 6 |
ICTE36C/TR12 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 7 |
ICTE36Ce3/TR12 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 8 |
ICTE36e3/TR12 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 9 |
NTE36 |
Silicon Complementary Transistors AF Power Amplifier, High Current Switch |
NTE Electronics |
| 10 |
NTE361 |
Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz |
NTE Electronics |
| 11 |
NTE363 |
Silicon NPN Transistor RF Power Amp, PO = 4W |
NTE Electronics |
| 12 |
NTE365 |
Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz |
NTE Electronics |
| 13 |
NTE366 |
Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz |
NTE Electronics |
| 14 |
NTE367 |
Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz |
NTE Electronics |
| 15 |
NTE368 |
Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz |
NTE Electronics |
| 16 |
NTE369 |
Silicon NPN Transistor TV Vertical Deflection, Switch |
NTE Electronics |
| 17 |
STE36N50 |
N Channel Enhancement Mode Power MOS Transistor in Isotop Package |
ST Microelectronics |
| | | |
