No. |
Part Name |
Description |
Manufacturer |
1 |
1SS390FHTE61 |
Band Switching Diode (corresponds to AEC-Q101) |
ROHM |
2 |
1SS390TE61 |
Band Switching Diode |
ROHM |
3 |
BCR101TE6327 |
Digital Transistors - R1=100kOhm; R2=100kOhm |
Infineon |
4 |
BCR103TE6327 |
Digital Transistors - R1= 2,2kOhm; R2= 2,2kOhm |
Infineon |
5 |
BCR108TE6327 |
Digital Transistors - R1= 2,2kOhm; R2= 47kOhm |
Infineon |
6 |
BCR112TE6327 |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
7 |
BCR114TE6327 |
Digital Transistors - R1= 4,7kOhm; R2= 10kOhm |
Infineon |
8 |
BCR116TE6327 |
Digital Transistors - R1= 4,7kOhm; R2= 47kOhm |
Infineon |
9 |
BCR119TE6327 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
10 |
BCR139TE6327 |
Digital Transistors - R1= 22 kOhm |
Infineon |
11 |
BCR146TE6327 |
Digital Transistors - R1= 47 kOhm ; R2= 22 kOhm |
Infineon |
12 |
BCR149TE6327 |
Digital Transistors - R1= 47 kOhm |
Infineon |
13 |
BCR151TE6327 |
Digital Transistors - R1=100 kOhm R2=100 kOhm |
Infineon |
14 |
BCR153TE6327 |
Digital Transistors - R1=2,2 kOhm R2=2,2 kOhm |
Infineon |
15 |
BCR164TE6327 |
Digital Transistors - R1=4,7 kOhm R2=10 kOhm |
Infineon |
16 |
BCR166TE6327 |
Digital Transistors - R1=4,7 kOhm R2=47 kOhm |
Infineon |
17 |
BCR169TE6327 |
Digital Transistors - R1=4,7 kOhm |
Infineon |
18 |
BCR179TE6327 |
Digital Transistors - R1=10 kOhm |
Infineon |
19 |
BCR185TE6327 |
Digital Transistors - R1=10 kOhm R2=47kOhm |
Infineon |
20 |
BCR189TE6327 |
Digital Transistors - R1=22 kOhm |
Infineon |
21 |
BCR191TE6327 |
Digital Transistors - R1=22 kOhm R2=22 kOhm |
Infineon |
22 |
BCR196TE6327 |
Digital Transistors - R1=47 kOhm R2=22 kOhm |
Infineon |
23 |
BCR199TE6327 |
Digital Transistors - R1= 47 kOhm |
Infineon |
24 |
BSP135TE6906 |
N-Channel SIPMOS Small-Signal Transistor |
Infineon |
25 |
K4S643232E-TE60 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
Samsung Electronic |
26 |
LTE67C-S2T2-35 |
Power TOPLED�, true green, colorless ... |
Infineon |
27 |
LTE67C-T2V1-35 |
Power TOPLED�, true green, colorless ... |
Infineon |
28 |
NTE60 |
Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications |
NTE Electronics |
29 |
NTE6002 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. |
NTE Electronics |
30 |
NTE6003 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. |
NTE Electronics |
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