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Datasheets for TE6

Datasheets found :: 246
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1SS390FHTE61 Band Switching Diode (corresponds to AEC-Q101) ROHM
2 1SS390TE61 Band Switching Diode ROHM
3 BCR101TE6327 Digital Transistors - R1=100kOhm; R2=100kOhm Infineon
4 BCR103TE6327 Digital Transistors - R1= 2,2kOhm; R2= 2,2kOhm Infineon
5 BCR108TE6327 Digital Transistors - R1= 2,2kOhm; R2= 47kOhm Infineon
6 BCR112TE6327 Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm Infineon
7 BCR114TE6327 Digital Transistors - R1= 4,7kOhm; R2= 10kOhm Infineon
8 BCR116TE6327 Digital Transistors - R1= 4,7kOhm; R2= 47kOhm Infineon
9 BCR119TE6327 Digital Transistors - R1= 4,7 kOhm Infineon
10 BCR139TE6327 Digital Transistors - R1= 22 kOhm Infineon
11 BCR146TE6327 Digital Transistors - R1= 47 kOhm ; R2= 22 kOhm Infineon
12 BCR149TE6327 Digital Transistors - R1= 47 kOhm Infineon
13 BCR151TE6327 Digital Transistors - R1=100 kOhm R2=100 kOhm Infineon
14 BCR153TE6327 Digital Transistors - R1=2,2 kOhm R2=2,2 kOhm Infineon
15 BCR164TE6327 Digital Transistors - R1=4,7 kOhm R2=10 kOhm Infineon
16 BCR166TE6327 Digital Transistors - R1=4,7 kOhm R2=47 kOhm Infineon
17 BCR169TE6327 Digital Transistors - R1=4,7 kOhm Infineon
18 BCR179TE6327 Digital Transistors - R1=10 kOhm Infineon
19 BCR185TE6327 Digital Transistors - R1=10 kOhm R2=47kOhm Infineon
20 BCR189TE6327 Digital Transistors - R1=22 kOhm Infineon
21 BCR191TE6327 Digital Transistors - R1=22 kOhm R2=22 kOhm Infineon
22 BCR196TE6327 Digital Transistors - R1=47 kOhm R2=22 kOhm Infineon
23 BCR199TE6327 Digital Transistors - R1= 47 kOhm Infineon
24 BSP135TE6906 N-Channel SIPMOS Small-Signal Transistor Infineon
25 K4S643232E-TE60 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Samsung Electronic
26 LTE67C-S2T2-35 Power TOPLED�, true green, colorless ... Infineon
27 LTE67C-T2V1-35 Power TOPLED�, true green, colorless ... Infineon
28 NTE60 Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications NTE Electronics
29 NTE6002 Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. NTE Electronics
30 NTE6003 Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. NTE Electronics


Datasheets found :: 246
Page: | 1 | 2 | 3 | 4 | 5 |



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