| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2041 |
Unmatched Tees Non-Isolated |
Tyco Electronics |
| 2 |
2041-6201-00 |
Unmatched tees non isolated |
MA-Com |
| 3 |
2041-6201-00 |
Unmatched Tees Non-Isolated |
Tyco Electronics |
| 4 |
2041-6202-00 |
Unmatched tees non isolated |
MA-Com |
| 5 |
2041-6202-00 |
Unmatched Tees Non-Isolated |
Tyco Electronics |
| 6 |
2041-6203-00 |
Unmatched tees non isolated |
MA-Com |
| 7 |
2041-6203-00 |
Unmatched Tees Non-Isolated |
Tyco Electronics |
| 8 |
2041-6204-00 |
Unmatched tees non isolated |
MA-Com |
| 9 |
2041-6204-00 |
Unmatched Tees Non-Isolated |
Tyco Electronics |
| 10 |
2322 640 90042 |
NTC Thermistors, Steel Capped Sensors |
Vishay |
| 11 |
232264090042 |
NTC Thermistors, Steel Capped Sensors |
Vishay |
| 12 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 13 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 14 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 15 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 16 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 17 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 18 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 19 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 20 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 21 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 22 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 23 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 24 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 25 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 26 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 27 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 28 |
54F189DL |
64-Bit Random Access Memory with TRI-STATEE Outputs |
National Semiconductor |
| 29 |
54F189FL |
64-Bit Random Access Memory with TRI-STATEE Outputs |
National Semiconductor |
| 30 |
54F189LL |
64-Bit Random Access Memory with TRI-STATEE Outputs |
National Semiconductor |
| | | |
