No. |
Part Name |
Description |
Manufacturer |
1 |
11C70 |
MASTER-SLAVE D-TYPE FLIP-FLOP |
National Semiconductor |
2 |
1N6766 |
12A center-tap ultra-fast rectifier |
Omnirel |
3 |
1N6766R |
12A center-tap ultra-fast rectifier |
Omnirel |
4 |
1N6767 |
12A center-tap ultra-fast rectifier |
Omnirel |
5 |
1N6767R |
12A center-tap ultra-fast rectifier |
Omnirel |
6 |
1S144 |
Meter-protection Diode |
TOSHIBA |
7 |
1SR18-100 |
Silicon rectifier diode - center-tapped type |
Shindengen |
8 |
1SR18-200 |
Silicon rectifier diode - center-tapped type |
Shindengen |
9 |
1SR18-400 |
Silicon rectifier diode - center-tapped type |
Shindengen |
10 |
1SR18R-100 |
Silicon rectifier diode - center-tapped type |
Shindengen |
11 |
1SR18R-200 |
Silicon rectifier diode - center-tapped type |
Shindengen |
12 |
1SR18R-400 |
Silicon rectifier diode - center-tapped type |
Shindengen |
13 |
2N5071 |
24W(CW), 76-MHz Emiter-Balasted Overlay RF Power Transistor |
RCA Solid State |
14 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
15 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
16 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
17 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
18 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
19 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
20 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
21 |
2N6265 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
22 |
2N6266 |
5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor |
RCA Solid State |
23 |
2N6267 |
10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
24 |
2N6268 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
25 |
2N6269 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
26 |
2N6390 |
2-GHz, Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
27 |
2N6391 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
28 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
29 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
30 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
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