No. |
Part Name |
Description |
Manufacturer |
1 |
0330NRXX-X |
Metal Oxide Varistors |
Stetron |
2 |
0330NRXXD |
MNR Varistors |
Stetron |
3 |
2SC3064 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
4 |
2SC3065 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
5 |
3N124 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
6 |
3N125 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
7 |
3N126 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
8 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
9 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
10 |
4CX1500B |
RADIAL BEAM POWER TETRODE |
Eimac |
11 |
4CX5000A |
VHF POWER TETRODES |
Eimac |
12 |
4CX5000R |
VHF POWER TETRODES |
Eimac |
13 |
4X150A |
RADIAL BEAM POWER TETRODE |
Eimac |
14 |
4X150D |
RADIAL BEAM POWER TETRODE |
Eimac |
15 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
16 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
17 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
18 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
19 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
20 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
21 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
22 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
23 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
24 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
25 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
26 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
27 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
28 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
29 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
30 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
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