| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ATF-21170 |
0.5-6 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 2 |
ATF-21170-STR |
0.5-6GHz low noise gallium arsenide FET |
Agilent (Hewlett-Packard) |
| 3 |
ATF-21186 |
0.5-6 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 4 |
ATF-21186-STR |
0.5-6 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 5 |
ATF-21186-TR1 |
0.5-6 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 6 |
ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 7 |
ATF-25570 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 8 |
ATF-25735 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 9 |
ATF-26836 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 10 |
ATF-26836-STR |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 11 |
ATF-26836-TR1 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 12 |
ATF-26884 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 13 |
ATF-26884-STR |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 14 |
ATF-26884-TR1 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 15 |
CM100TF-24 |
HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 16 |
CM100TF-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 17 |
CM100TF-24H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 18 |
CM100TF-24H |
Six-IGBT IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 19 |
CM100TF-28H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 20 |
CM100TF-28H |
IGBT Modules:1400V |
Mitsubishi Electric Corporation |
| 21 |
CM100TF-28H |
Six-IGBT IGBTMOD 100 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 22 |
CM15TF-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 23 |
CM15TF-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 24 |
CM15TF-24H |
Six-IGBT IGBTMOD 15 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 25 |
CM20TF-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 26 |
CM20TF-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 27 |
CM20TF-24H |
Six-IGBT IGBTMOD 20 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 28 |
CM30TF-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 29 |
CM30TF-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 30 |
CM30TF-24H |
Six-IGBT IGBTMOD 30 Amperes/1200 Volts |
Powerex Power Semiconductors |
| | | |
