Datasheets for TF100

Datasheets found :: 31 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
1	ERJS1TF1000U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
2	ERJS1TF1001U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
3	ERJS1TF1002U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
4	ERJS1TF1003U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
5	ERJS1TF1004U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
6	ERJU1TF1000U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
7	ERJU1TF1001U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
8	ERJU1TF1002U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
9	ERJU1TF1003U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
10	ERJU1TF1004U	Anti-Sulfurated Thick Film Chip Resistors	Panasonic
11	KDZLVTF100	Zener Diode (corresponds to AEC-Q101)	ROHM
12	PTF10007	35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
13	PTF10009	85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
14	PTF10015	50 Watts, 300�960 MHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
15	PTF10019	70 Watts, 860�960 MHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
16	PTF10020	125 Watts, 860�960 MHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
17	PTF10021	30 Watts, 1.4�1.6 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
18	PTF10031	50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
19	PTF10036	85 Watts, 860�960 MHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
20	PTF10043	12 Watts, 1.9�2.0 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
21	PTF10045	30 Watts, 1.60�1.65 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
22	PTF10048	30 Watts, 2.1�2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor	Ericsson Microelectronics
23	PTF10052	35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
24	PTF10053	12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
25	PTF10065	30 Watts, 1.93�1.99 GHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
26	STF100N10F7	N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220FP package	ST Microelectronics
27	TF100	Charge storage Dual J-K flip-flop (35MHz separate clock), military temperature range	Transitron Electronic
28	TF1001A	LG1602 Decision Circuit	Agere Systems
29	TF1003C	LG1605DXB Limiting Amplifier	Agere Systems
30	TF1004A	LG1600FXH Clock and Data Regenerator	Agere Systems

Datasheets found :: 31 Page: | 1 | 2 |