| No. |
Part Name |
Description |
Manufacturer |
| 1 |
A29DL162TG-120 |
16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
AMIC Technology |
| 2 |
A29DL163TG-120 |
16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
AMIC Technology |
| 3 |
A29DL164TG-120 |
16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
AMIC Technology |
| 4 |
A29L160TG-120 |
2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only/ Boot Sector Flash Memory |
AMIC Technology |
| 5 |
KM68257CLTG-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
| 6 |
KM68257CTG-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
| 7 |
KM68257ETG-12 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns |
Samsung Electronic |
| 8 |
MTG-12232B |
MTG-12232B |
Microtips Technology |
| 9 |
MTG-12232B |
MTG-12232B |
Microtips Technology |
| 10 |
MTG-12232C |
MTG-12232C |
Microtips Technology |
| 11 |
MTG-12232C |
MTG-12232C |
Microtips Technology |
| 12 |
MTG-12232D |
MTG-12232D |
Microtips Technology |
| 13 |
MTG-12232D |
MTG-12232D |
Microtips Technology |
| 14 |
MTG-12864A |
MTG-12864A |
Microchip |
| 15 |
MTG-12864A |
MTG-12864A |
Microchip |
| 16 |
MTG-12864D |
MTG-12864D |
Microchip |
| 17 |
MTG-12864D |
MTG-12864D |
Microchip |
| 18 |
TG-120 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 19 |
TG-1208 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 20 |
TG-121 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 21 |
TG-122 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 22 |
TG-123 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 23 |
TG-124 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 24 |
TG-125 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 25 |
TG-126 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| 26 |
TG-127 |
HIGH ENERGY SPARK GAP DEVICES |
Clare Inc |
| | | |
