| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MAX6717AUKTGD1+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 2 |
MAX6717AUKTGD1+T |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 3 |
NTGD10 |
Miniature Diode in glass package |
Newmarket Transistors NKT |
| 4 |
NTGD1100L |
Power MOSFET 8 V, ±3.3 A, Load Switch with Level-Shift P-Channel, TSOP6 |
ON Semiconductor |
| 5 |
STGD10HF60KD |
Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode |
ST Microelectronics |
| 6 |
STGD10NC60H |
N-channel 10 A, 600 V, DPAK very fast PowerMESH(TM) IGBT |
ST Microelectronics |
| 7 |
STGD10NC60HD |
Very fast "H" series |
ST Microelectronics |
| 8 |
STGD10NC60HDT4 |
Very fast "H" series |
ST Microelectronics |
| 9 |
STGD10NC60HT4 |
N-channel 10 A, 600 V, DPAK very fast PowerMESH(TM) IGBT |
ST Microelectronics |
| 10 |
STGD10NC60KD |
10 A, 600 V short-circuit rugged IGBT |
ST Microelectronics |
| 11 |
STGD10NC60KDT4 |
10 A, 600 V short-circuit rugged IGBT |
ST Microelectronics |
| 12 |
STGD14NC60K |
New short circuit rugged "K" series |
ST Microelectronics |
| 13 |
STGD14NC60KT4 |
New short circuit rugged "K" series |
ST Microelectronics |
| 14 |
STGD18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 15 |
STGD18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 16 |
STGD18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 17 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
| | | |
