No. |
Part Name |
Description |
Manufacturer |
1 |
CAT28C512HTI-12T |
512K CMOS parallel EEPROM 120ns |
Catalyst Semiconductor |
2 |
CAT28C512TI-12T |
512K CMOS parallel EEPROM 120ns |
Catalyst Semiconductor |
3 |
CAT28F001TI-12BT |
120ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
4 |
CAT28F001TI-12TT |
120ns 1M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
5 |
CAT28F002TI-12BT |
120ns 2M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
6 |
CAT28F002TI-12TT |
120ns 2M-bit CMOS boot block flash memory |
Catalyst Semiconductor |
7 |
CAT28F010TI-12T |
120ns 2M-bit CMOS flash memory |
Catalyst Semiconductor |
8 |
CAT28F020TI-12T |
2 Megabit CMOS Flash Memory |
Catalyst Semiconductor |
9 |
CAT28F512TI-12T |
120ns 512K-bit CMOS flash memory |
Catalyst Semiconductor |
10 |
CY8C3244LTI-123 |
PSoC� 3 CY8C32 Programmable System-on-Chip |
Cypress |
11 |
CY8C3244LTI-123T |
PSoC� 3 CY8C32 Programmable System-on-Chip |
Cypress |
12 |
CY8C3246LTI-125 |
PSoC� 3 CY8C32 Programmable System-on-Chip |
Cypress |
13 |
CY8C3246LTI-125T |
PSoC� 3 CY8C32 Programmable System-on-Chip |
Cypress |
14 |
CY8C3246LTI-128 |
PSoC� 3 CY8C32 Programmable System-on-Chip |
Cypress |
15 |
CY8C3246LTI-128T |
PSoC� 3 CY8C32 Programmable System-on-Chip |
Cypress |
16 |
HM6216255HCTTI-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
17 |
HM6216255HTTI-12 |
4M high Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
18 |
HM62W16255HCTTI-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
19 |
KM681002CLTI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
20 |
KM681002CTI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
21 |
M5M29GB640C3BTI-12 |
3.3V ONLY FLASHMEMORY |
etc |
22 |
M5M29GB640C3TTI-12 |
3.3V ONLY FLASHMEMORY |
etc |
23 |
MX23C3210TI-12 |
Access time: 120; 5 volt, 32-Mbit (4M x 8/2M x 16) mask ROM |
Macronix International |
24 |
MX23L1610TI-12 |
Access time: 120; 3.3 volt, 16-Mbit (2M x 8/1M x 16) mask ROM |
Macronix International |
25 |
MX23L1611TI-12 |
Access time: 120; 3.3 volt, 16-Mbit (2M x 8/1M x 16) mask ROM with page mode |
Macronix International |
26 |
MX26C1000BTI-12 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
27 |
MX26C2000BTI-12 |
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
28 |
MX26C4000BTI-12 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
29 |
MX26L1620TI-12 |
16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
Macronix International |
30 |
MX26L3220TI-12 |
32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
Macronix International |
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