No. |
Part Name |
Description |
Manufacturer |
1 |
28C256ATI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
2 |
28C256ATI-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
3 |
28LV256TI-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
4 |
28LV256TI-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
5 |
HM62V16100LTI-4 |
Wide Temperature Range Version |
Hitachi Semiconductor |
6 |
HM62V16100LTI-4 |
Memory>Low Power SRAM |
Renesas |
7 |
HM62V16100LTI-4SL |
Wide Temperature Range Version |
Hitachi Semiconductor |
8 |
HM62V16100LTI-4SL |
Memory>Low Power SRAM |
Renesas |
9 |
MX27C256TI-45 |
256K-BIT [32K x 8] CMOS EPROM |
Macronix International |
10 |
MX27C512TI-45 |
512K-BIT [64Kx8] CMOS EPROM |
Macronix International |
11 |
X20C16TI-45 |
High Speed AUTOSTORE NOVRAM |
Xicor |
12 |
X28VC256TI-45 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
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