No. |
Part Name |
Description |
Manufacturer |
1 |
28LV256TI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
2 |
28LV256TI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
3 |
BS616LV1623TI-55 |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable |
Brilliance Semiconductor |
4 |
BS62LV1029STI-55 |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
5 |
BS62LV1029TI-55 |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
6 |
BS62LV2009STI-55 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
7 |
BS62LV2009TI-55 |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
Brilliance Semiconductor |
8 |
BS62LV4008STI-55 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
9 |
BS62LV4008TI-55 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
10 |
HM6216514LTTI-5SL |
Memory>Low Power SRAM |
Renesas |
11 |
HM628100LTTI-5SL |
Memory>Low Power SRAM |
Renesas |
12 |
HM628512CLTTI-5 |
Memory>Low Power SRAM |
Renesas |
13 |
HM62V16100LTI-5SL |
Wide Temperature Range Version |
Hitachi Semiconductor |
14 |
HM62V16100LTI-5SL |
Memory>Low Power SRAM |
Renesas |
15 |
HM62V16514LTTI-5 |
Memory>Low Power SRAM |
Renesas |
16 |
HM62V16514LTTI-5SL |
Memory>Low Power SRAM |
Renesas |
17 |
HM62V8100LTTI-5 |
Memory>Low Power SRAM |
Renesas |
18 |
HM62V8100LTTI-5SL |
Memory>Low Power SRAM |
Renesas |
19 |
KM684000BLTI-5L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
20 |
KM684000CLTI-5L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
21 |
MX27C1000TI-55 |
1M-BIT [128K x 8] CMOS EPROM |
Macronix International |
22 |
MX27C2000TI-55 |
2M-BIT [256K x 8] CMOS EPROM |
Macronix International |
23 |
MX27C256TI-55 |
256K-BIT [32K x 8] CMOS EPROM |
Macronix International |
24 |
MX27C512TI-55 |
512K-BIT [64Kx8] CMOS EPROM |
Macronix International |
25 |
MX29F002TTI-55 |
Access time: 55ns; 2M-bit (256K x 8) CMOS flash memory |
Macronix International |
26 |
PEEL18CV8TI-5 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
27 |
STC62WV1024STI-55 |
VERY LOW POWER VOLTAGE CMOS SRAM |
etc |
28 |
STC62WV1024TI-55 |
VERY LOW POWER VOLTAGE CMOS SRAM |
etc |
29 |
X20C16TI-55 |
High Speed AUTOSTORE NOVRAM |
Xicor |
30 |
X28HC64TI-50 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
| | | |