No. |
Part Name |
Description |
Manufacturer |
1 |
CL7128AETI100-7 |
Laser processed logic device |
CLEARLOGIC |
2 |
CL7128ATI100-10 |
Laser processed logic device |
CLEARLOGIC |
3 |
CL7128STI100-10 |
Laser processed logic device |
CLEARLOGIC |
4 |
CL7256AETI100-7 |
Laser processed logic device |
CLEARLOGIC |
5 |
CL8282TI100-3 |
Laser-configured ASIC |
CLEARLOGIC |
6 |
EPM7064AETI100-7 |
Programmable logic , 64 macrocells, 4 logic array blocks, 68 I/O pins, 7ns |
Altera Corporation |
7 |
EPM7064STI100-7 |
Programmable logic , 64 macrocells, 4 logic array blocks, 68 I/O pins, 7ns |
Altera Corporation |
8 |
EPM7128AETI100-7 |
Programmable logic , 128 macrocells, 8 logic array blocks, 84 I/O pins, 7ns |
Altera Corporation |
9 |
EPM7128STI100-10 |
Programmable logic , 128 macrocells, 8 logic array blocks, 84 I/O pins, 10ns |
Altera Corporation |
10 |
EPM7160STI100-10 |
Programmable logic , 160 macrocells, 10 logic array blocks, 84 I/O pins, 10ns |
Altera Corporation |
11 |
EPM7256AETI100-7 |
Programmable logic , 256 macrocells, 16 logic array blocks, 84 I/O pins, 7ns |
Altera Corporation |
12 |
K6R1008C1C-TI10 |
128K x 8 high speed static RAM, 5V operating, 10ns |
Samsung Electronic |
13 |
K6R1008C1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
14 |
K6R1008V1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
15 |
K6R1016C1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
16 |
K6R1016V1D-TI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
17 |
K6R4008C1D-TI10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
18 |
K6R4008V1D-TI10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
19 |
K6R4016C1D-TI10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
20 |
STI10NM60N |
N-channel 600 V, 0.53 Ohm, 10 A, I2PAK MDmesh(TM) II Power MOSFET |
ST Microelectronics |
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