| No. |
Part Name |
Description |
Manufacturer |
| 1 |
103-1 |
Application Note - Flash Analog to Digital Converters Optimizing Performance |
Comlinear Corporation |
| 2 |
11016 |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 3 |
1CE-402 |
Operating Considerations for RCA Solid State Devices - Application Note |
RCA Solid State |
| 4 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 5 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 6 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 7 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 8 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 9 |
21050 |
21050 PCI-to-PCI Bridge Hardware Implementation Application Note |
Intel |
| 10 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 11 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 12 |
2N5071 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
| 13 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
| 14 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 15 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 16 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
| 17 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 18 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 19 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 20 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 21 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 22 |
3SK255-T1 |
UHF tuner high-frequency amplification N-channel MOSFET |
NEC |
| 23 |
3SK255-T2 |
UHF tuner high-frequency amplification N-channel MOSFET |
NEC |
| 24 |
4-LAYER DIODES |
Application Notes |
ITT Semiconductors |
| 25 |
40290 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 26 |
40291 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 27 |
40292 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 28 |
4J100-25 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 29 |
4J100-5 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 30 |
4J200-25 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| | | |
