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Datasheets for TION PO

Datasheets found :: 319
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 2FWJ42M SCHOTTKY BARRIER RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION TOSHIBA
2 2SB468 Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output Hitachi Semiconductor
3 2SC681 Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV Horizontal Deflection Power Output Hitachi Semiconductor
4 2SC681A Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV Horizontal Deflection Power Output Hitachi Semiconductor
5 2SD102 Silicon NPN diffused junction power transistor TOSHIBA
6 2SD103 Silicon NPN diffused junction power transistor TOSHIBA
7 2SD110 Silicon NPN diffused junction power transistor TOSHIBA
8 2SD111 Silicon NPN diffused junction power transistor TOSHIBA
9 2SD113 Silicon NPN diffused junction power transistor TOSHIBA
10 2SD114 Silicon NPN diffused junction power transistor TOSHIBA
11 2SD129 Silicon NPN diffused junction power transistor TOSHIBA
12 2SD130 Silicon NPN diffused junction power transistor TOSHIBA
13 2SD1427 HORIZONTAL DEFLECTION POWER TRANSISTOR MOSPEC Semiconductor
14 2SD234G Silicon NPN diffused junction power transistor, complementary to 2SB434G TOSHIBA
15 2SD235G Silicon NPN diffused junction power transistor, complementary to 2SB435G TOSHIBA
16 2SD869 HORIZONTAL DEFLECTION POWER TRANSISTOR(NPN) MOSPEC Semiconductor
17 5Z27 ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. TOSHIBA
18 5Z30 ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. TOSHIBA
19 A232D RGB Matrix, VCR operation possible, possibly equivalent TDA2532 RFT
20 A241D Image IF amplifier, AFC, VCR operation possible, possibly equivalent TDA2541 RFT
21 A255D Horizontal combination, VCR operation possible, possibly equivalent TA2593 RFT
22 AD152 Germanium PNP junction power transistor TELEFUNKEN
23 ADJ11005 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 5 V DC. 1 form C. 1 coil latching type. Flux-resistant type. Without test button. Matsushita Electric Works(Nais)
24 ADJ11006 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 6 V DC. 1 form C. 1 coil latching type. Flux-resistant type. Without test button. Matsushita Electric Works(Nais)
25 ADJ11012 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 12 V DC. 1 form C. 1 coil latching type. Flux-resistant type. Without test button. Matsushita Electric Works(Nais)
26 ADJ11024 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 24 V DC. 1 form C. 1 coil latching type. Flux-resistant type. Without test button. Matsushita Electric Works(Nais)
27 ADJ11048 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 48 V DC. 1 form C. 1 coil latching type. Flux-resistant type. Without test button. Matsushita Electric Works(Nais)
28 ADJ11105 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 5 V DC. 1 form C. 1 coil latching type. Flux-resistant type. With test button. Matsushita Electric Works(Nais)
29 ADJ11106 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 6 V DC. 1 form C. 1 coil latching type. Flux-resistant type. With test button. Matsushita Electric Works(Nais)
30 ADJ11112 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 12 V DC. 1 form C. 1 coil latching type. Flux-resistant type. With test button. Matsushita Electric Works(Nais)


Datasheets found :: 319
Page: | 1 | 2 | 3 | 4 | 5 |



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