| No. |
Part Name |
Description |
Manufacturer |
| 1 |
A290021TL-100 |
100ns 20mA 1uA 256K x 8bit CMOS 5.0V-only |
AMIC Technology |
| 2 |
A29002TL-100 |
100ns 20mA 1uA 256K x 8bit CMOS 5.0V-only |
AMIC Technology |
| 3 |
HYB39S64160ATL-10 |
64Mbit Synchronous DRAM |
Siemens |
| 4 |
HYB39S64400ATL-10 |
64Mbit Synchronous DRAM |
Siemens |
| 5 |
HYB39S64800ATL-10 |
64Mbit Synchronous DRAM |
Siemens |
| 6 |
TC55257BFTL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
| 7 |
TC55257BFTL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
| 8 |
TC554001FTL-10 |
524,288 WORDS x 8BIT STATIC RAM |
TOSHIBA |
| 9 |
TC554001FTL-10V |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
| 10 |
TC554161FTL-10 |
262, 144-word by 16 bit static RAM, access time 100ns |
TOSHIBA |
| 11 |
TC554161FTL-10L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
| 12 |
TC554161FTL-10V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 13 |
TC59S6404BFTL-10 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
| 14 |
TC59S6408BFTL-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 15 |
TC59S6416BFTL-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| | | |
