| No. |
Part Name |
Description |
Manufacturer |
| 1 |
K4S280832B-TL10 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
| 2 |
K4S281632B-TL10 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 3 |
K4S281632M-TL10 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 4 |
K4S641632C-TL10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz |
Samsung Electronic |
| 5 |
K4S643232C-TL10 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 6 |
K6R4016C1D-TL10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 7 |
LH28F160BGB-BTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 8 |
LH28F160BGB-TTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 9 |
LH28F160BGE-BTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 10 |
LH28F160BGE-TTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 11 |
LH28F160BGHB-BTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 12 |
LH28F160BGHB-TTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 13 |
LH28F160BGHE-BTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 14 |
LH28F160BGHE-TTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 15 |
LH28F160BGHR-BTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 16 |
LH28F160BGHR-TTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 17 |
LH28F160BGR-BTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 18 |
LH28F160BGR-TTL10 |
16M-bit(1MB x 16)smart 3 Flash Memory |
SHARP |
| 19 |
STL100N10F7 |
N-channel 100 V, 0.0062 Ohm typ., 19 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 20 |
STL100N1VH5 |
N-channel 12 V, 0.0022 Ohm typ., 25 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 21 |
STL100N6LF6 |
N-channel 60 V, 0.0038 Ohm typ., 22 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 22 |
STL105NS3LLH7 |
N-channel 30 V, 0.0032 Ohm typ., 27 A STripFET(TM) VII DeepGATE(TM) Power MOSFETs plus monolithic Schottky in a PowerFLAT(TM) 5x6 |
ST Microelectronics |
| 23 |
STL10DN15F3 |
N-channel 150 V, 0.20 Ohm typ., 2.8 A STripFET(TM) III Power MOSFET in a PowerFLAT(TM) 5x6 double island package |
ST Microelectronics |
| 24 |
STL10N3LLH5 |
N-channel 30 V, 0.015 Ohm, 9 A, PowerFLAT(TM) 3.3x3.3 STripFET(TM) V Power MOSFET |
ST Microelectronics |
| 25 |
STL10N60M2 |
N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT(TM) 5x6 HV package |
ST Microelectronics |
| 26 |
TC59S6404BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 27 |
TC59S6408BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 28 |
TC59S6416BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 29 |
TL103W |
Dual OpAmp With Internal Reference |
Texas Instruments |
| 30 |
TL103WA |
Dual OpAmp With Internal Reference |
Texas Instruments |
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