Datasheets for TL60

Datasheets found :: 52 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
1	APTGT100TL60T3G	Three Level Inverter	Microsemi
2	APTGT150TL60G	Three Level Inverter	Microsemi
3	APTGT200TL60G	Three Level Inverter	Microsemi
4	APTGT20TL601G	Three Level Inverter	Microsemi
5	APTGT300TL60G	Three Level Inverter	Microsemi
6	APTGT30TL601G	Three Level Inverter	Microsemi
7	APTGT30TL60T3G	Three Level Inverter	Microsemi
8	APTGT50TL601G	Three Level Inverter	Microsemi
9	APTGT50TL60T3G	Three Level Inverter	Microsemi
10	APTGT75TL60T3G	Three Level Inverter	Microsemi
11	ATL60	The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools.	Atmel
12	ATL60	The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools.	Atmel
13	K4E641612B-TL60	4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power	Samsung Electronic
14	K4E641612C-TL60	4M x 16bit CMOS Dynamic RAM with Extended Data Out	Samsung Electronic
15	K4E661612B-TL60	4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power	Samsung Electronic
16	K4E661612C-TL60	4M x 16bit CMOS Dynamic RAM with Extended Data Out	Samsung Electronic
17	K4F641612B-TL60	4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power	Samsung Electronic
18	K4F641612C-TL60	4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power	Samsung Electronic
19	K4F661612B-TL60	4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power	Samsung Electronic
20	K4F661612C-TL60	4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power	Samsung Electronic
21	K4S281632D-TL60	128Mb SDRAM, 3.3V, LVTTL, 166MHz	Samsung Electronic
22	K4S281632E-TL60	128Mb E-die SDRAM Specification	Samsung Electronic
23	K4S281632F-TL60	128Mb F-die SDRAM Specification	Samsung Electronic
24	K4S561632E-TL60	256Mb E-die SDRAM Specification	Samsung Electronic
25	K4S641632C-TL60	64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz	Samsung Electronic
26	K4S641632E-TL60	64Mbit SDRAM	Samsung Electronic
27	K4S641632F-TL60	64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
28	K4S641632H-TL60	64Mb H-die SDRAM Specification	Samsung Electronic
29	K4S643232C-TL60	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
30	K4S643232E-TL60	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic

Datasheets found :: 52 Page: | 1 | 2 |