No. |
Part Name |
Description |
Manufacturer |
1 |
K4S641632C-TL70 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
2 |
K4S641632E-TL70 |
64Mbit SDRAM |
Samsung Electronic |
3 |
K4S641632F-TL70 |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
4 |
K4S641632H-TL70 |
64Mb H-die SDRAM Specification |
Samsung Electronic |
5 |
K4S643232C-TL70 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
6 |
K4S643232E-TL70 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
7 |
K4S643232F-TL70 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
8 |
K4S643232H-TL70 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 143MHz |
Samsung Electronic |
9 |
K6T0808C1D-TL70 |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
10 |
KBR-455KTL70 |
2-4V, 455KHz, 4-bit single chip microcomputer |
Hynix Semiconductor |
11 |
STL70N10F3 |
N-channel 100 V, 0.0065 Ohm, 16 A PowerFLAT(TM) 5x6 STripFET(TM) III Power MOSFET |
ST Microelectronics |
12 |
STL70N4LLF5 |
Automotive-grade N-channel 40 V, 6.1 mOhm, 18 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
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