| No. |
Part Name |
Description |
Manufacturer |
| 1 |
K4S280832B-TL80 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
| 2 |
K4S281632B-TL80 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 3 |
K4S281632M-TL80 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 4 |
K4S641632C-TL80 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
| 5 |
K4S643232C-TL80 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 6 |
STL80N3LLH6 |
N-channel 30 V, 0.0046 Ohm, 21 A PowerFLAT(TM) 5x6 STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 7 |
STL80N75F6 |
N-channel 75 V, 4.5 mOhm typ., 18 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package |
ST Microelectronics |
| | | |
