No. |
Part Name |
Description |
Manufacturer |
1 |
MAX6715UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
2 |
MAX6716UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
3 |
MAX6719UTMSD1+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
4 |
MAX6719UTMSD1+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
5 |
MAX6719UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
6 |
MAX6720UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7 |
MAX6721UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
8 |
MAX6722UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
9 |
MAX6723UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10 |
MAX6724UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
11 |
NTMSD2P102L |
FETKY® |
ON Semiconductor |
12 |
NTMSD2P102LR2 |
FETKY® |
ON Semiconductor |
13 |
NTMSD2P102LR2-D |
FETKY E Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
14 |
NTMSD3P102 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
15 |
NTMSD3P102R2 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
16 |
NTMSD3P102R2-D |
FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
17 |
NTMSD3P303 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
18 |
NTMSD3P303R2 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
19 |
NTMSD3P303R2-D |
FETKY E P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
20 |
NTMSD6N303 |
30V FETKY® Complementary SO8 Dual |
ON Semiconductor |
21 |
NTMSD6N303R2 |
Power MOSFET 6 Amps, 30 Volts N-Channel SO-8 FETKY |
ON Semiconductor |
22 |
TMSDC6722BRFPA225 |
Floating-Point Digital Signal Processor 144-HTQFP |
Texas Instruments |
23 |
TMSDC6726BRFPA225 |
Floating-Point Digital Signal Processor 144-HTQFP |
Texas Instruments |
24 |
TMSDC6727BGDHA250 |
Floating-Point Digital Signal Processor 256-BGA |
Texas Instruments |
25 |
TMSDC6727BZDHA250 |
Floating-Point Digital Signal Processor 256-BGA |
Texas Instruments |
26 |
TMSDVC5410GGWR100 |
Digital Signal Processor |
Texas Instruments |
27 |
TMSDVC5416GGUR160 |
Digital Signal Processor |
Texas Instruments |
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