| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MAX6715UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 2 |
MAX6716UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 3 |
MAX6719UTMSD1+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 4 |
MAX6719UTMSD1+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 5 |
MAX6719UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 6 |
MAX6720UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 7 |
MAX6721UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 8 |
MAX6722UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 9 |
MAX6723UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 10 |
MAX6724UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 11 |
NTMSD2P102L |
FETKY® |
ON Semiconductor |
| 12 |
NTMSD2P102LR2 |
FETKY® |
ON Semiconductor |
| 13 |
NTMSD2P102LR2-D |
FETKY E Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 14 |
NTMSD3P102 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 15 |
NTMSD3P102R2 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 16 |
NTMSD3P102R2-D |
FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 17 |
NTMSD3P303 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 18 |
NTMSD3P303R2 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 19 |
NTMSD3P303R2-D |
FETKY E P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 20 |
NTMSD6N303 |
30V FETKY® Complementary SO8 Dual |
ON Semiconductor |
| 21 |
NTMSD6N303R2 |
Power MOSFET 6 Amps, 30 Volts N-Channel SO-8 FETKY |
ON Semiconductor |
| 22 |
TMSDC6722BRFPA225 |
Floating-Point Digital Signal Processor 144-HTQFP |
Texas Instruments |
| 23 |
TMSDC6726BRFPA225 |
Floating-Point Digital Signal Processor 144-HTQFP |
Texas Instruments |
| 24 |
TMSDC6727BGDHA250 |
Floating-Point Digital Signal Processor 256-BGA |
Texas Instruments |
| 25 |
TMSDC6727BZDHA250 |
Floating-Point Digital Signal Processor 256-BGA |
Texas Instruments |
| 26 |
TMSDVC5410GGWR100 |
Digital Signal Processor |
Texas Instruments |
| 27 |
TMSDVC5416GGUR160 |
Digital Signal Processor |
Texas Instruments |
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