No. |
Part Name |
Description |
Manufacturer |
1 |
86207A |
86207A RF Bridge, 75 Ohm, 300 kHz to 3 GHz |
Agilent (Hewlett-Packard) |
2 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
3 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
4 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
5 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
6 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
7 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
8 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
9 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
10 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
11 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
12 |
CGH27015 |
15W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
Wolfspeed |
13 |
CGH27030 |
30W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
Wolfspeed |
14 |
CGH27060 |
8W (average), 28V, GaN HEMT for linear communications ranging from VHF to 3 GHz |
Wolfspeed |
15 |
CGY40 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz) |
Siemens |
16 |
CLY2 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
17 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
18 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
19 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
20 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
21 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
22 |
Q62702-A1261 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
23 |
Q62702-A1267 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
24 |
Q62702-A1268 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
25 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
26 |
RF3817 |
Cascadable Broadband GaAs MMIC Amplifier DC to 3 GHz |
RF Micro Devices |
27 |
RF3818 |
Cascadable Broadband GaAs MMIC Amplifier DC to 3 GHz |
RF Micro Devices |
28 |
ZSWA-4-30DR |
Switch High Isolation/ SP4T/ 50 DC to 3 GHz |
Mini-Circuits |
| | | |