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Datasheets for TO 300

Datasheets found :: 38912
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No. Part Name Description Manufacturer
1 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
2 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
3 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
4 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
5 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
6 2SA1284 900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 Isahaya Electronics Corporation
7 2SB1035 900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 Isahaya Electronics Corporation
8 2SC3243 900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 Isahaya Electronics Corporation
9 2SC3244 900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 Isahaya Electronics Corporation
10 2SC3246 900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 Isahaya Electronics Corporation
11 2SC3438 500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 Isahaya Electronics Corporation
12 2SC4357 500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. Isahaya Electronics Corporation
13 2SC6046 200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. Isahaya Electronics Corporation
14 2SD1447 900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 Isahaya Electronics Corporation
15 3B45 Isolated Frequency Input; 0 to 300 Hz Signal Conditioning Module Analog Devices
16 3B45-00 Isolated Frequency Input; 0 to 300 Hz Signal Conditioning Module Analog Devices
17 3B45-01 Isolated Frequency Input; 0 to 300 Hz Signal Conditioning Module Analog Devices
18 3B45-02 Isolated Frequency Input; 0 to 300 Hz Signal Conditioning Module Analog Devices
19 3B45-CUSTOM Isolated Frequency Input; 0 to 300 Hz Signal Conditioning Module Analog Devices
20 3N159 MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz RCA Solid State
21 3N187 MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz RCA Solid State
22 A78 5 TO 300 MHz CASCADABLE AMPLIFIER Tyco Electronics
23 A79 5 TO 300 MHz CASCADABLE AMPLIFIER Tyco Electronics
24 A87-2 10 TO 300 MHz CASCADABLE AMPLIFIER Tyco Electronics
25 AC3055 10 TO 3000 MHz TO-8 CASCADABLE AMPLIFIER Cougar Components
26 ADL5373 2300 MHz TO 3000 MHz Quadrature Modulator Analog Devices
27 ADRF6704 2050 MHz TO 3000 MHz Quadrature Modulator with 2500 MHz TO 2900 MHATR0797 65 to 300 MHz SiGe IF receiver/demodulator Atmel
29 BF543 Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) Siemens
30 BF550 PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) Siemens


Datasheets found :: 38912
Page: | 1 | 2 | 3 | 4 | 5 |



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