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Datasheets for TO DA

Datasheets found :: 31
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 BPX59 Silicon NPN photo darlingtontransistor AEG-TELEFUNKEN
2 ISL12022 Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation �5ppm with Auto Day Light Saving Intersil
3 ISL12022M Low Power RTC with Battery Backed SRAM, Integrated �5ppm Temperature Compensation and Auto Daylight Saving Intersil
4 ISL12022MA Low Power RTC with Battery Backed SRAM, Integrated �5ppm Temperature Compensation and Auto Daylight Saving Intersil
5 ISL12022MR5421 Low Power RTC with Battery Backed SRAM, Integrated �5ppm Temperature Compensation and Auto Daylight Saving Intersil
6 ISL12023 Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation �5ppm with Auto Day Light Saving Intersil
7 LH1539AAC 1 Form A Photo Darlington Telecomswitch Vishay
8 LH1539AACTR 1 Form A Photo Darlington Telecomswitch Vishay
9 LH1539AB 1 Form A Photo Darlington Telecomswitch Vishay
10 MDL78 NPN SILICON PLANAR PHOTO DARLINGTON TRANSISTOR Micro Electronics
11 MDL82 NPN SILICON PLANAR PHOTO DARLINGTON TRANSISTOR Micro Electronics
12 MRD360 40V photo darlington transistors NPN silicon 250mW Motorola
13 MRD370 40V photo darlington transistors NPN silicon 250mW Motorola
14 MTD6170 PHOTO DARLINGTON Marktech Optoelectronics
15 MTRS9070(LB) Reflective switch. Infrared LED + photo darlington. Marktech Optoelectronics
16 NTE3036 Phototransistor Silicon NPN Photo Darlington Light Detector NTE Electronics
17 NTE3084 Optoisolater NPN Photo Darlington Output NTE Electronics
18 PT-23G Photo darlingtons Kondenshi Corp
19 PT-304R2L Photo darlingtons Kondenshi Corp
20 TC1410 The TC1410/1410N are 0.5V CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. T Microchip
21 TC1410N The TC1410/1410N are 0.5V CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. T Microchip
22 TC1411 The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. The Microchip
23 TC1411N The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. The Microchip
24 TC1412 The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. The Microchip
25 TC1412N The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. The Microchip
26 TC1413 The TC1413/1413N are 3A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity that occurs on the ground pin Microchip
27 TC1413N The TC1413/1413N are 3A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity that occurs on the ground pin Microchip
28 TPS605 PHOTO DALINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TOSHIBA
29 TPS605(LB) PHOTO DALINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TOSHIBA
30 TPS625 PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TOSHIBA


Datasheets found :: 31
Page: | 1 | 2 |



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