No. |
Part Name |
Description |
Manufacturer |
1 |
BPX59 |
Silicon NPN photo darlingtontransistor |
AEG-TELEFUNKEN |
2 |
ISL12022 |
Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation �5ppm with Auto Day Light Saving |
Intersil |
3 |
ISL12022M |
Low Power RTC with Battery Backed SRAM, Integrated �5ppm Temperature Compensation and Auto Daylight Saving |
Intersil |
4 |
ISL12022MA |
Low Power RTC with Battery Backed SRAM, Integrated �5ppm Temperature Compensation and Auto Daylight Saving |
Intersil |
5 |
ISL12022MR5421 |
Low Power RTC with Battery Backed SRAM, Integrated �5ppm Temperature Compensation and Auto Daylight Saving |
Intersil |
6 |
ISL12023 |
Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation �5ppm with Auto Day Light Saving |
Intersil |
7 |
LH1539AAC |
1 Form A Photo Darlington Telecomswitch |
Vishay |
8 |
LH1539AACTR |
1 Form A Photo Darlington Telecomswitch |
Vishay |
9 |
LH1539AB |
1 Form A Photo Darlington Telecomswitch |
Vishay |
10 |
MDL78 |
NPN SILICON PLANAR PHOTO DARLINGTON TRANSISTOR |
Micro Electronics |
11 |
MDL82 |
NPN SILICON PLANAR PHOTO DARLINGTON TRANSISTOR |
Micro Electronics |
12 |
MRD360 |
40V photo darlington transistors NPN silicon 250mW |
Motorola |
13 |
MRD370 |
40V photo darlington transistors NPN silicon 250mW |
Motorola |
14 |
MTD6170 |
PHOTO DARLINGTON |
Marktech Optoelectronics |
15 |
MTRS9070(LB) |
Reflective switch. Infrared LED + photo darlington. |
Marktech Optoelectronics |
16 |
NTE3036 |
Phototransistor Silicon NPN Photo Darlington Light Detector |
NTE Electronics |
17 |
NTE3084 |
Optoisolater NPN Photo Darlington Output |
NTE Electronics |
18 |
PT-23G |
Photo darlingtons |
Kondenshi Corp |
19 |
PT-304R2L |
Photo darlingtons |
Kondenshi Corp |
20 |
TC1410 |
The TC1410/1410N are 0.5V CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. T |
Microchip |
21 |
TC1410N |
The TC1410/1410N are 0.5V CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. T |
Microchip |
22 |
TC1411 |
The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. The |
Microchip |
23 |
TC1411N |
The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. The |
Microchip |
24 |
TC1412 |
The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. The |
Microchip |
25 |
TC1412N |
The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. The |
Microchip |
26 |
TC1413 |
The TC1413/1413N are 3A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity that occurs on the ground pin |
Microchip |
27 |
TC1413N |
The TC1413/1413N are 3A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity that occurs on the ground pin |
Microchip |
28 |
TPS605 |
PHOTO DALINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR |
TOSHIBA |
29 |
TPS605(LB) |
PHOTO DALINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR |
TOSHIBA |
30 |
TPS625 |
PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR |
TOSHIBA |
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