No. |
Part Name |
Description |
Manufacturer |
1 |
187 |
Subminiature krypton lamp with clear-end. 4.2V, 1.05A, 50 lumens. |
Gilway Technical Lamp |
2 |
187-1 |
Subminiature Krypton Lamps with Lens-End |
Gilway Technical Lamp |
3 |
188 |
Subminiature krypton lamp with clear-end. 5.0V, 1.00A, 42 lumens. |
Gilway Technical Lamp |
4 |
188-1 |
Subminiature Krypton Lamps with Lens-End |
Gilway Technical Lamp |
5 |
2003 |
HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS |
Allegro MicroSystems |
6 |
2064 |
QUAD1.5ADARLINGTONSWITCHES |
Allegro MicroSystems |
7 |
2540 |
QUADDARLINGTONPOWERDRIVER |
Allegro MicroSystems |
8 |
2544 |
QUADDARLINGTONPOWERDRIVER |
Allegro MicroSystems |
9 |
2803 |
HIGH-VOLTAGE / HIGH-CURRENT DARLINGTON ARRAYS |
Allegro MicroSystems |
10 |
2878 |
QUAD HIGH-CURRENT DARLINGTON SWITCHES |
Allegro MicroSystems |
11 |
2DI150Z140 |
Z-Series Darlington Modules |
Fuji Electric |
12 |
2N2586 |
NPN Darlington-Connected Silicon Transistor |
Texas Instruments |
13 |
2N2723 |
Two NPN silicon annular transistors connected as a darlington amplifier |
Motorola |
14 |
2N2723 |
NPN silicon transistor darlington amplifiers |
Sprague |
15 |
2N2724 |
Two NPN silicon annular transistors connected as a darlington amplifier |
Motorola |
16 |
2N2724 |
NPN silicon transistor darlington amplifiers |
Sprague |
17 |
2N2725 |
Two NPN silicon annular transistors connected as a darlington amplifier |
Motorola |
18 |
2N2725 |
NPN silicon transistor darlington amplifiers |
Sprague |
19 |
2N2785 |
Two NPN silicon annular transistors connected as a darlington ampifier |
Motorola |
20 |
2N2785 |
NPN silicon transistor darlington amplifiers |
Sprague |
21 |
2N4974 |
PNP silicon annular darlington amplifier |
Motorola |
22 |
2N4975 |
PNP silicon annular darlington amplifier |
Motorola |
23 |
2N5305 |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
24 |
2N5305 |
NPN darlington transistor |
National Semiconductor |
25 |
2N5306 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
26 |
2N5306 |
NPN Darlington Transistor |
Fairchild Semiconductor |
27 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
28 |
2N5306 |
NPN darlington transistor |
National Semiconductor |
29 |
2N5306A |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
30 |
2N5306_D74Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
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