| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S1553 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 2 |
1S1554 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 3 |
1S1555 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 4 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
| 5 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 6 |
1SS358 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 7 |
1SS365 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 8 |
1SS366 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 9 |
1SS375 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 10 |
1SV128 |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS |
TOSHIBA |
| 11 |
1SV237 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 12 |
1SV252 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 13 |
1SV271 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 14 |
1SV298 |
pi Type Attenuator Applications |
SANYO |
| 15 |
1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 16 |
2-AA113 |
HF germanium diode pair for high-resistance radio detector and discriminator circuits |
TUNGSRAM |
| 17 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
| 18 |
2-AA119 |
HF germanium tip diode pair for high-resistance ratio detector and discriminator circuits |
TUNGSRAM |
| 19 |
2-OA1172 |
HF germanium pair diode for discriminator and radio detector circuits |
TUNGSRAM |
| 20 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
| 21 |
2222 405 . . . . . |
Integrated Passive Device (Capacitor and Varistor) |
Vishay |
| 22 |
2N1141 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 23 |
2N1142 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 24 |
2N1143 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 25 |
2N1195 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 26 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 27 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 28 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 29 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 30 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
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