| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1738U |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 2 |
1738UAA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 3 |
1738UBA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 4 |
1738UCA |
Small form-ractor erbium-doped fiber amplifier with uncooled pump. Connector FC/APC. Electrical connection: male 2 x 10 at 2 mm spacing. |
Agere Systems |
| 5 |
1N5156 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 6 |
1N5157 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 7 |
2N2196 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 8 |
2N2197 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 9 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
| 10 |
2N3740 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 11 |
2N3741 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 12 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 13 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 14 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 15 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 16 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 17 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 18 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 19 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 20 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 21 |
2N6718L |
Mini size of Discrete semiconductor elements |
SINYORK |
| 22 |
2SA1266 |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
| 23 |
2SA1266L |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
| 24 |
2SA1271 |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
| 25 |
2SA1273 |
Silicon PNP Transistor Epitaxial Planar Type(PCT PROCESS) |
Korea Electronics (KEC) |
| 26 |
2SC3198L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 27 |
2SC3199 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Unknow |
| 28 |
2SC3199L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Unknow |
| 29 |
2SC3200 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 30 |
2SC3201 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| | | |
