Datasheets for TOR RA

Datasheets found :: 28 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	DM74S289J	4.75 V to 5.25 V, 64-bit (16 x 4) open-collector RAM TRI-STATE RAM	National Semiconductor
2	DM74S289N	4.75 V to 5.25 V, 64-bit (16 x 4) open-collector RAM TRI-STATE RAM	National Semiconductor
3	DS_K1S161611A	1Mx16 bit Uni-Transistor Random Access Memory	Samsung Electronic
4	DS_K1S16161CA	1Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung Electronic
5	FJH301/7426N	Quadruple 4-input NAND gate with open collector output transistor rated at 15V	Mullard
6	FJH311/7401AN	Quadruple 4-input NAND gate with open collector output transistor rated at 15V	Mullard
7	FJH321/7405AN	Sextuple single-input inverter gate with open collector output transistor rated at 15V	Mullard
8	K1B6416B6C	4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory	Samsung Electronic
9	K1S161611A	1Mx16 bit Uni-Transistor Random Access Memory	Samsung Electronic
10	K1S161611A-I	1Mx16 bit Uni-Transistor Random Access Memory	Samsung Electronic
11	K1S16161CA	1Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung Electronic
12	K1S16161CA-I	1Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung Electronic
13	K1S1616BCA	1Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung Electronic
14	K1S321611C	2Mx16 bit Uni-Transistor Random Access Memory	Samsung Electronic
15	K1S321611C-FI70	2Mx16 bit Uni-Transistor Random Access Memory	Samsung Electronic
16	K1S321611C-I	2Mx16 bit Uni-Transistor Random Access Memory	Samsung Electronic
17	K1S32161CC	2Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung Electronic
18	K1S32161CC-FI70	2Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung Electronic
19	K1S32161CC-I	2Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung Electronic
20	K1S3216B1C	2Mx16 bit Uni-Transistor Random Access Memory	Samsung Electronic
21	K1S3216B1C-I	2Mx16 bit Uni-Transistor Random Access Memory	Samsung Electronic
22	K1S3216BCD	2Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung Electronic
23	K1S64161CC	4Mx16 bit Page Mode Uni-Transistor Random Access Memory	Samsung Electronic
24	MAX5491RA02000-T	Resistor ratio accuracy: 0.035% MAX, 50 V, 30 kom precision-matched resistor-divider in SOT23	MAXIM - Dallas Semiconductor
25	MAX5491RB02000-T	Resistor ratio accuracy: 0.05% MAX, 50 V, 30 kom precision-matched resistor-divider in SOT23	MAXIM - Dallas Semiconductor
26	MAX5491RC02000-T	Resistor ratio accuracy: 0.1% MAX, 50 V, 30 kom precision-matched resistor-divider in SOT23	MAXIM - Dallas Semiconductor
27	MAX5491TC05000-T	Resistor ratio accuracy: 0.1% MAX, 50 V, 30 kom precision-matched resistor-divider in SOT23	MAXIM - Dallas Semiconductor
28	ORN DIVIDER	SOIC 8 Pin 4 Resistor Ratio Divider	Vishay

Datasheets found :: 28 Page: | 1 |