| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 2 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 3 |
1V010 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
| 4 |
1V014 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 22 V @ 1mA DC test current. |
NTE Electronics |
| 5 |
1V015 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 24 V @ 1mA DC test current. |
NTE Electronics |
| 6 |
1V017 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 27 V @ 1mA DC test current. |
NTE Electronics |
| 7 |
1V020 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 33 V @ 1mA DC test current. |
NTE Electronics |
| 8 |
1V025 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 39 V @ 1mA DC test current. |
NTE Electronics |
| 9 |
1V030 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 47 V @ 1mA DC test current. |
NTE Electronics |
| 10 |
1V035 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 56 V @ 1mA DC test current. |
NTE Electronics |
| 11 |
1V040 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 68 V @ 1mA DC test current. |
NTE Electronics |
| 12 |
1V050 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 82 V @ 1mA DC test current. |
NTE Electronics |
| 13 |
1V060 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 100 V @ 1mA DC test current. |
NTE Electronics |
| 14 |
1V075 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 120 V @ 1mA DC test current. |
NTE Electronics |
| 15 |
1V095 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 150 V @ 1mA DC test current. |
NTE Electronics |
| 16 |
1V115 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 171 V @ 1mA DC test current. |
NTE Electronics |
| 17 |
1V130 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
| 18 |
1V150 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
| 19 |
1V175 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 270 V @ 1mA DC test current. |
NTE Electronics |
| 20 |
1V250 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 21 |
1V275 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
| 22 |
1V300 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
| 23 |
2SA1778 |
PNP Epitaxial Planar Silicon Transistor VHF Converter, Local Oscillator Applications |
SANYO |
| 24 |
2SA229 |
High-Frequency Transistor VHF/UHF |
TOSHIBA |
| 25 |
2SA230 |
High-Frequency Transistor VHF/UHF |
TOSHIBA |
| 26 |
2SA240 |
High-Frequency Transistor VHF/UHF |
TOSHIBA |
| 27 |
2SA431 |
High-Frequency Transistor VHF/UHF |
TOSHIBA |
| 28 |
2SA432 |
High-Frequency Transistor VHF/UHF |
TOSHIBA |
| 29 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 30 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
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