| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 2 |
5962-0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 3 |
5962-0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 4 |
5962-0323601QXX |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. |
Aeroflex Circuit Technology |
| 5 |
5962-0323601VXX |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. |
Aeroflex Circuit Technology |
| 6 |
5962-0323602QXX |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. |
Aeroflex Circuit Technology |
| 7 |
5962-0323602VXX |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. |
Aeroflex Circuit Technology |
| 8 |
5962-9960601QUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory optional. Total dose none. |
Aeroflex Circuit Technology |
| 9 |
5962-9960601TUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 10 |
5962-9960602QUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 11 |
5962-9960602TUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 12 |
5962D0053601QUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 13 |
5962D0053601QXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 14 |
5962D0053601TUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 15 |
5962D0053601TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 16 |
5962D0053602QUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 17 |
5962D0053602QXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 18 |
5962D0053602TUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 19 |
5962D0053602TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 20 |
5962D0053603QUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 21 |
5962D0053603QXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 22 |
5962D0053603TUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 23 |
5962D0053603TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 24 |
5962D0053604QUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 25 |
5962D0053604QXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 26 |
5962D0053604TUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 27 |
5962D0053604TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 28 |
5962D0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 29 |
5962D0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 30 |
5962D9960601QUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
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