| No. |
Part Name |
Description |
Manufacturer |
| 1 |
13PD100-F |
The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. |
Anadigics Inc |
| 2 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 3 |
13PD100-ST |
The 13PD75-ST, -SMA, -SC, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned ... |
Anadigics Inc |
| 4 |
13PD100-TO |
The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... |
Anadigics Inc |
| 5 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 6 |
13PD150-ST |
The 13PD150-ST, -SMA, -FC, -SC, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header ... |
Anadigics Inc |
| 7 |
13PD150-TO |
The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended ... |
Anadigics Inc |
| 8 |
1N188 |
Photosensitive Device IR(dark)=20uA 40V, Sensitivity = 10uA/mW |
Motorola |
| 9 |
1N189 |
Photosensitive Device; RD=4,000 ohm, Sensitivity = 0.083%/fc |
Motorola |
| 10 |
1N2175 |
Photosensitive Device IR(dark)=0.5µA 50V, Sensitivity=0.22µA/mW/cm2 |
Motorola |
| 11 |
1N3734 |
Photosensitive Device BV=100V, Sensitivity=0.05µA/fc |
Motorola |
| 12 |
1N4378 |
Photosensitive Device I(dark)=10nA Sensitivity=9.0mA Vce=5.0V H=9.0 mW/cm2 |
Motorola |
| 13 |
1N77A |
Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V |
Motorola |
| 14 |
1N77B |
Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V |
Motorola |
| 15 |
1N85 |
Photosensitive Device; IR(dark)=20uA 90V, Sensiviry = 0.35uA/mW 90V |
Motorola |
| 16 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
| 17 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
| 18 |
3WK163 31 |
Optosensor |
Tesla Elektronicke |
| 19 |
3WK163 32 |
Optosensor |
Tesla Elektronicke |
| 20 |
C2719 |
Photosensor amplifier |
Hamamatsu Corporation |
| 21 |
C6386 |
Photosensor amplifier |
Hamamatsu Corporation |
| 22 |
C8366 |
Supply voltage: +-18V; current-to-voltage conversionphotosensor amplifier for high-speed Si PIN photodiode |
Hamamatsu Corporation |
| 23 |
C9051 |
Photosensor amplifier |
Hamamatsu Corporation |
| 24 |
CNA1006N |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
| 25 |
CNA1006N |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
| 26 |
CNA1007H |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
| 27 |
CNA1007H |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
| 28 |
CNA1009H |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
| 29 |
CNA1009H |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
| 30 |
CNA1011K |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
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